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(PhysOrg.com) -- A new mechanism will make it possible to switch data storage in the future.

(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric material, they have, for the first time, been able to observe directly how dipoles, which store the information in this material, continuously rotate and therefore may be organised in circular structures. The report was published in the journal Science