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Magnetic random-access memory based on new spin transfer technology achieves higher storage density

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Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of solid-state memory that uses electrical currents to read and write data that are stored on magnetic moment of electrons. Rachid Sbiaa and co-workers at the A*STAR Data Storage Institute have now enhanced the storage density of STT-MRAM by packing multiple bits of information into each of its memory cells.

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