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(PhysOrg.com) -- The past decade has seen the emergence of the field of spintronics, aimed at increasing the efficiency of information processing and computer memories. The idea behind spintronics is to harness the magnetic property of the electron, referred to as its spin. This property can then be used, in addition to the electron charge, for increasing the functionality of the semiconductor computer chip, in terms of its capacity to store and process information.

Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of solid-state memory that uses electrical currents to read and write data that are stored on magnetic moment of electrons

Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of solid-state memory that uses electrical currents to read and write data that are stored on magnetic moment of electrons. Rachid Sbiaa and co-workers at the A*STAR Data Storage Institute have now enhanced the storage density of STT-MRAM by packing multiple bits of information into each of its memory cells.

Among aficionados of performance automobiles, the emergence of gasoline-electric hybrids and pure-electric vehicles was met with genuine concern: Would the quest for fuel efficiency and environmental friendliness take all the fun out of driving? Happily, several automakers have unveiled production (or at least producible) cars—vehicles like the Porsche 918 Spyder, ...