Magnetic random-access memory based on new spin transfer technology achieves higher storage density

Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of solid-state memory that uses electrical currents to read and write data that are stored on magnetic moment of electrons

Read the rest here:
Magnetic random-access memory based on new spin transfer technology achieves higher storage density