Mapping deformation in buried semiconductor structures using the hard X-Ray nanoprobe

(PhysOrg.com) — Scientists from IBM’s T. J. Watson Research Center and Columbia University, working with the X-Ray Microscopy Group, have mapped rotation and strain fields across a silicon-on-insulator (SOI) structure that included a liner of stressed Si3N4 using X-ray nanodiffraction (nano-XRD) at the CNM/APS Hard X-Ray Nanoprobe beamline.

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Mapping deformation in buried semiconductor structures using the hard X-Ray nanoprobe